Device Technologist - GaN Transistors & LNOI Photonics

About the role

DAS Photonics is building a new microfabrication facility for LNOI photonic devices and GaN-based power transistors, including hybrid integration using Micro Transfer Printing (µTP). We are hiring Device Engineers / Technologists to lead the design and development of next-generation transistors and integrated photonic components.

In this position, you will define device architecture, support process flow development, and collaborate closely with process engineers and integration teams to enable in-house fabrication and product evolution.

Key Responsibilities

• Design and develop advanced GaN transistor architectures and/or LNOI photonic components (e.g., modulators, switches).
• Translate performance and application requirements into device specifications and layout.
• Support the definition of process flows aligned with cleanroom capabilities and equipment.
• Use simulation tools (TCAD, Lumerical, COMSOL ) to guide design iterations and validate performance.
• Collaborate with fabrication and integration teams during prototyping and characterization.
• Evaluate design impact on packaging, test and reliability constraints.
• Generate documentation, design files and IP contributions.
• Provide technical leadership in design reviews and roadmap planning.
• Contribute to future technology and device strategy within DAS Photonics.

Qualifications & Skills

• Degree (preferably PhD) in Electrical Engineering, Photonics, Physics, or related.
• Experience in design and development of GaN power transistors and/or LNOI photonic devices.
• Knowledge of semiconductor physics, material properties, and process-design interactions.
• Experience with simulation tools (e.g., Silvaco, Sentaurus, Lumerical, COMSOL).
• Ability to interface with process and packaging teams in a collaborative development environment.
• Familiarity with cleanroom environments and device fabrication constraints.
• Strong documentation and communication skills (English required, Spanish is a plus).

Desirable

• Experience with GaN HEMT, e-mode transistors or similar technologies.
• Background in LNOI photonic modulators or III-V photonic integration.
• Familiarity with hybrid integration techniques (e.g., µTP or wafer bonding).
• Prior participation in prototyping cycles or cleanroom transfer-to-fab projects.